z-logo
open-access-imgOpen Access
Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon
Author(s) -
Иван Федорович Червоный,
Алексей Вадимович Бубинец
Publication year - 2015
Publication title -
sciencerise
Language(s) - English
Resource type - Journals
eISSN - 2313-8416
pISSN - 2313-6286
DOI - 10.15587/2313-8416.2015.53451
Subject(s) - monocrystalline silicon , silicon , stacking , boron , materials science , carbon fibers , oxygen , crystallography , doping , chemical physics , chemistry , metallurgy , optoelectronics , composite material , organic chemistry , composite number

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom