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Participation of oxygen and carbon in formation of oxidation-induced stacking faults in monocrystalline silicon
Author(s) -
Иван Федорович Червоный,
Алексей Вадимович Бубинец
Publication year - 2015
Publication title -
sciencerise
Language(s) - English
Resource type - Journals
eISSN - 2313-8416
pISSN - 2313-6286
DOI - 10.15587/2313-8416.2015.53451
Subject(s) - monocrystalline silicon , silicon , stacking , boron , materials science , carbon fibers , oxygen , crystallography , doping , chemical physics , chemistry , metallurgy , optoelectronics , composite material , organic chemistry , composite number

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