Open AccessDevelopment of technology of multicharged ion implantation of GaAs for submicron structures of large-scale integrated circuits
Author(s) -
Степан Петрович Новосядлий,
Сергій Іванович Бойко,
Л. В. Мельник,
Святослав Володимирович Новосядлий
Publication year - 2015
Publication title -
eastern-european journal of enterprise technologies
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.268
H-Index - 24
eISSN - 1729-4061
pISSN - 1729-3774
DOI - 10.15587/1729-4061.2015.54233
Subject(s) - materials science , optoelectronics , schottky barrier , ion implantation , transistor , doping , wafer , field effect transistor , ion , annealing (glass) , engineering physics , nanotechnology , electrical engineering , voltage , chemistry , engineering , organic chemistry , diode , composite material