English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

To study the radiation effect of Fermi–Dirac (F–D) semiconductor devices based on numerical simulation, two methods are used. One is based on the combination of F–D statistical method and computer simulation. The method discusses the influence of temperature and light energy on the carrier number by starting from an intrinsic silicon semiconductor and carries out computer simulation on the carrier number in intrinsic silicon semiconductor. TID Sim, a three-dimensional parallel solver for ionizing radiation effects of semiconductor devices, is developed. The ionization radiation damage of typical metal oxide semiconductor (MOS) FET NMOS and bipolar transistor GLPNP is simulated. It was proved that the variation trend was close to a straight line in the temperature range (278–358 K) studied in this article. The results are consistent with those of the statistical distribution of semiconductor carriers. This method is suitable for calculating the number of semiconductor carriers, and it is an effective method to study the problems related to carrier distribution.

Analysis of radiation effects of semiconductor devices based on numerical simulation Fermi–Dirac