Open AccessDesign of Low Noise Amplifier for WLAN using pHEMT
Author(s) -
G. Thirunavukkarasu,
G. Murugesan
Publication year - 2020
Publication title -
international journal of engineering and technology
Language(s) - English
Resource type - Journals
ISSN - 2227-524X
DOI - 10.14419/ijet.v9i2.30051
Subject(s) - high electron mobility transistor , low noise amplifier , amplifier , electrical engineering , noise (video) , electronic engineering , computer science , engineering , transistor , voltage , cmos , artificial intelligence , image (mathematics)
The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.