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Phase sensitive amplifiers (PSAs) have the potential to empower substantialadvances in emerging generations of optical communication systems as well asclassical and quantum on-chip signal processing. The core building block of aPSA is a nonlinear medium. While the second-order nonlinearity ($\chi^{(2)}$)is stronger than the third-order nonlinearity ($\chi^{(3)}$), it is used lessoften in semiconductors for parametric amplification owing to the challenges ofeffectively phase matching the interacting waves as well as two-photonabsorption of the pump. In this work, we demonstrate the successful design,fabrication, and characterization of the first $\chi^{(2)}$-based semiconductorPSA using an efficient phase matching approach and a pulsed pump, based on analuminium gallium arsenide (AlGaAs) waveguide platform. Non-centrosymmetricsemiconductors such as AlGaAs offer appreciable $\chi^{(2)}$. Such waveguidesalso achieve more than one order of magnitude greater pump field confinementwhen compared to other materials with large $\chi^{(2)}$ such as PeriodicallyPoled Lithium Niobate (PPLN). Our AlGaAs PSA achieves an on-chip in-phase gain,a sensitivity of 0.005 photons per pulse, and approaches theoretical minimalnoise figure (NF) of 0~dB. With the capability of operating on signal stateswith sub-single photons per pulse, our PSA could usher in a new era of on-chipquantum circuits.

A $\chi^{(2)}$-based AlGaAs Phase Sensitive Amplifier with Record Gain, Noise and Sensitivity