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Utilizing spin or valley degree of freedom is one of the promising approachesto realize more energy-efficient information processing. In the 2D transitionmetal dichalcogenide, the spin/valley current can be generated by utilizing thecircular photogalvanic effect (CPGE), i.e., the generation of photocurrent by acircularly polarized light. Here we show that an in-plane electric field atMoS2/WSe2 heterostructure-electrode boundary results in an electrically tunablecircular photogalvanic effect (CPGE) under optical excitation with normalincidence. The observed CPGE can be explained by the valence band shift due tothe in-plane electric field and different effective relaxation times betweenhole and electron combined with the valley optical selection rule. Furthermore,we show that the CPGE can be controlled by changing the Fermi level using anout-of-plane electric field. Such phenomena persist even at room temperature.This finding may facilitate the utilization of 2D heterostructure as anopto-valleytronics and opto-spintronics device platform.

Circular photogalvanic effect in 2D van der Waals heterostructure