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The development of versatile and novel material platforms for integratedphotonics is of prime importance in the perspective of future applications ofphotonic integrated circuits for quantum information and sensing. Here wepresent a low-loss material platform based on high-refractive index siliconoxynitride (\ce{SiON}), which offers significant characteristics for linear andnon-linear optics applications in a wide range of red/near-infraredwavelengths. The demonstrated propagation loss $<1.5$~dB/cm for visiblewavelengths enables the realization of long and intricate circuitry for photonmanipulations, as well as the realization of high quality factor resonators. Inaddition, the proposed \ce{SiON} shows a high nonlinear coefficient of$10^{-19}$~m$^2$/W, improving the strength of nonlinear effects exploitable foron-chip photon generation schemes.

Silicon oxynitride platform for linear and nonlinear photonics at NIR wavelengths