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We present net gain measurements at room temperature inAl$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm,using the variable stripe length method. Measurements were conducted at twodifferent positions on the sample, where the net gain threshold was attained at218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, weobserved an anomalous amplification of the photoluminescence intensity thatoccurs for long stripe lengths (superior to 400 $\mu$m) and high pumping power(superior to 550 kW/cm$^{2}$), leading to an overestimation of the gain value.We attribute such a phenomenon to the feedback provided by the reflection fromcracks, which were created during the epitaxial growth due to the stronglattice mismatch between different layers. The highest gain value withoutanomalous amplification was 131 cm$^{-1}$, obtained at the maximum pumpingpower density of the experimental setup (743 kW/cm$^{2}$). Using the intrinsicefficiency limit of the cathodoluminescence process, we estimate a lower limitfor electron beam pumped laser threshold at room temperature of 390 kW/cm$^{2}$for this multi-quantum well structure.

Optical net gain measurement on Al$_{0.07}$Ga$_{0.93}$N/GaN multi-quantum well