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Excitons in van der Waals (vdW) stacking interfaces can be trapped in orderedmoire potential arrays giving rise to attractive phenomenons of quantum opticsand bosonic many-body effects. Compare to the prevalent transition metaldichalcogenides (TMDs) systems, due to the wide bandgap and low dielectricconstant, excitons in twist-stacked hexagonal boron nitride (hBN) areanticipated trapped in deeper moire potential, which enhances the strength ofinteractions. However, constrained by the common low detectivity of weaklight-emitting in the deep-ultraviolet (DUV) bands, the moire excitons intwisthBN remain elusive. Here, we report that a remarkable DUV emitting band(peak located at ~260 nm) only emerges at the twisted stacking area of hBN,which is performed by a high collection efficiency and spatially-resolvedcathodoluminescence (CL) at room temperature. Significant peak redshiftingcontrast to defect-bound excitons of bulk hBN indicates the giant trappingeffects of moir\'e potential for excitons. The observation of deeply trappedexcitons motivates further studies of bosonic strongly correlation physicsbased on the twist-hBN system.

Giant moire trapping of excitons in twisted hBN