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We demonstrate a 13.3 MHz repetition rate, broadband THz source withmilliwatt-average power, obtained by collinear optical rectification of ahigh-power Yb-doped thin-disk laser in the organic crystal BNA(N-benzyl-2-methyl-4-nitroaniline). Our source reaches a maximum THz averagepower of 0.95 mW with an optical-to-THz efficiency of 4e-4 and a spectralbandwidth spanning up to 6 THz at -50 dB, driven by 2.4 W average power (afteran optical chopper with duty cycle of 10%), 85 fs-pulses. This high averagepower excitation was possible without damaging the crystal by using adiamond-heatsinked crystal with significantly improved thermal properties. Tothe best of our knowledge, this result represents the highest THz average powerreported so far using the commercially available organic crystal BNA, showingthe potential of these crystals for high average power, high repetition ratefemtosecond excitation. The combination of high power, high dynamic range, highrepetition rate and broadband spectrum makes the demonstrated THz source highlyattractive to improve various time-domain spectroscopy applications.Furthermore, we present a first exploration of the thermal behavior of BNA inthis excitation regime, showing that thermal effects are the main limitation inaverage power scaling in these crystals.

Milliwatt average power, MHz-repetition rate, broadband THz generation in organic crystal BNA with diamond substrate