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High-mobility Ge nMOSFETs with ZrO 2  gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O 3 ) treatment, O 3  post-treatment and without O 3  treatment. It is found that with O 3  treatment, the Ge nMOSFETs with ZrO 2  dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility ( μ  eff ) of 682 cm 2 /Vs, which is higher than that of the Si universal mobility at the medium inversion charge density ( Q  inv ). On the other hand, the O 3  post-treatment with Al 2 O 3  interfacial layer can provide dramatically enhanced- μ  eff , achieving about 50%  μ  eff  improvement as compared to the Si universal mobility at medium  Q  inv  of 5 × 10 12  cm −2 . These results indicate the potential utilization of ZrO 2  dielectric in high-performance Ge nMOSFETs.

Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility