Open AccessInvestigation of Tm2O3 As a Gate Dielectric for Ge MOS Devices
Author(s) -
Laura Žurauskaitė,
Leanne A. H. Jones,
V.R. Dhanak,
Ivona Z. Mitrović,
PerErik Hellström,
Mikael Östling
Publication year - 2018
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2018-02/31/1020
Subject(s) - materials science , dielectric , germanium , passivation , equivalent oxide thickness , oxide , high κ dielectric , gate dielectric , annealing (glass) , gate oxide , analytical chemistry (journal) , optoelectronics , silicon , layer (electronics) , nanotechnology , chemistry , transistor , electrical engineering , metallurgy , engineering , voltage , chromatography
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