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Synthetic dimensions, which simulate spatial coordinates using non-spatialdegrees of freedom, are drawing interest in topological science and otherfields for modelling higher-dimensional phenomena on simple structures. Wepresent the first realization of a synthetic frequency dimension on a siliconring resonator photonic device fabricated using a CMOS process. We confirm thatits coupled modes correspond to a 1D tight-binding model through acquisition ofup to 280 GHz bandwidth optical frequency comb-like spectra, and by measuringthe first synthetic band structures on an integrated device. Furthermore, werealized two types of gauge potentials along the frequency dimension, andprobed their effects through the associated band structures. An electric fieldanalogue was produced via modulation detuning, whereas effective magneticfields were induced using synchronized nearest- and second-nearest-neighborcoupling. Creation of coupled mode lattices and two effective forces on amonolithic Si CMOS device represents a key step towards wider adoption oftopological principles.

Synthetic dimension band structures on a Si CMOS photonic platform