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This paper presents a highly-integrated novel silicon micromachined single-pole-single-throw waveguide switch based on two microelectromechanically reconfigurable switching surfaces (MEMS-RSs), which allows optimizing the switching performance by tuning the interference between the two such MEMS-RSs utilizing integrated electrostatic comb-drive actuators. The switch prototype is implemented with axially aligned standard WR-3.4 waveguide ports with a total footprint of 3mmx3.5mmx1.2mm. The measured blocking (OFF) state insertion loss (isolation) and return loss, measured between two standard WR-3.4 waveguide flanges, are 28.5-32.5 dB and better than 0.7 dB, and the propagating (ON) state insertion and return losses are 0.7-1.2 dB and better than 17 dB in the 220-290 GHz frequency band, respectively. The measured results were in excellent agreement with the simulation data, implying 27.5&#x0025; fractional bandwidth, which is very close to a full waveguide band performance. For further investigations, two variants of the switching circuit with only a single MEMS-RS and without any MEMS-RSs have also been fabricated. The single MEMS-RS switch achieved the OFF-state isolation, ON-state insertion loss, and return loss of only 11.5-12.5 dB, 0.8-1.3 dB, and better than 12 dB from 220 to 274 GHz, respectively, which clearly indicates the drastic performance improvement of the interference-based double MEMS-RSs switch design. Moreover, measurement of the waveguide-only reference structure showed that the waveguide section&#x00A0;alone, attributed to 0.2-0.5 dB of the measured ON-state insertion loss of the double MEMS-RSs switch, and the rest is due to the introduction of the MEMS-RSs inside the waveguides.

A High-Performance 220-290 GHz Micromachined- Waveguide Switch Based on Interference Between MEMS Reconfigurable Surfaces