English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( &#x00D7;5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 &#x03BC;m) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.

ieee transactions on terahertz science and technology

A 474 GHz HBV Frequency Quintupler Integrated on a 20 <formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox{m}}$</tex> </formula> Thick Silicon Substrate

A 474 GHz HBV Frequency Quintupler Integrated on a 20 $\mu{\hbox{m}}$ Thick Silicon Substrate