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We present a calibration of a commercial silicon diode with proton and alpha beams and gamma rays. The diode together with a fast acquisition chain can be exploited for both direct and indirect (through the secondary radiation field) beam characterization. Within this work, we demonstrate the detector capabilities of resolving single-energy-deposition events and independently measuring dose rate and beam flux. Profiting from the mixed radiation field in CERN&#x2019;s high-energy accelerator mixed field facility (CHARM) we show how the silicon detector can be exploited to characterize the mixed radiation field present in it, which in turn is used for validating the radiation tolerance of components and systems to be installed in the European Organization for Nuclear Research (CERN) accelerator complex.

Mixed-Field Radiation Monitoring and Beam Characterization Through Silicon Diode Detectors