English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We designed and fabricated a 300-GHz-band fundamental mixer in indium phosphide (InP) high electron mobility transistor (HEMT) technology for 6G wireless communications. We devised a widely split frequency matching network to widen the bandwidth of a resistive mixer. The mixer IC achieved a conversion gain of &#x2212;15 and &#x2212;6-dB RF bandwidth of 100 GHz (220&#x2013;320 GHz), the widest ever reported. We implemented the mixer IC as a WR3.4 waveguide mixer module and performed a back-to-back data transmission experiment in three different frequency bands. Data rates of 120, 152, and 168 Gbps were achieved in each band. We also developed a dual-band data transmission system with a local oscillator (LO) leakage canceling method. It was capable of transmitting data at 240 Gbps, the highest rate reported to date, and suppressing LO leakage by 60 dB.

220-to-320-GHz Fundamental Mixer in 60-nm InP HEMT Technology Achieving 240-Gbps Dual-Band Data Transmission