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This study presents an experimental demonstration of 3-D-stackable hafnia-based selector-free cross-point FeRAM, with enhanced disturbance immunity achieved through design technology co-optimization (DTCO). Considering ferroelectric (FE) dynamics, the disturbance behavior of FE devices has been systematically and quantitatively examined using the proposed &#x201C;pulse-disturb&#x201D; analysis method. Through the optimization of grain uniformity and interfacial layers, the fabricated Hf   $_{{0.5}}$   Zr0.5O2 (HZO) FE capacitor exhibits large grain size exceeding 30 nm with record best disturbance immunity among FE-HZO. It also achieves a significant improvement of MW in selector-free FeRAM operation and enhanced remnant polarization (   ${P}_{\text {r}}$   ) of approximately    $23~\mu \text{C}$   /cm2, low operation voltage (2.4 V), high endurance (1013 cycles), long retention capability (ten years), and excellent potential for 3-D stacking. Moreover, to address the multiple pulses disturb issue, a novel &#x201C;disturb-recovery&#x201D; pulsing method is proposed, showing multidisturb-free operation for practical cross-point array applications. Based on the above strategies, 1-kbit selector-free cross-point FeRAM array is experimentally demonstrated with successful read/write operation, indicating its great potential for high-density and low-power memory applications.

Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM