English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

By combining microscopy investigation, light-beam induced current (LBIC), micro-photoluminescence (   $\mu $   -PL), and micro-electroluminescence (   $\mu $   -EL) characterization, we investigate the electrical and optical properties of V-pits and trench-like defects in high-periodicity InGaN/GaN multiple quantum wells (MQWs) solar cells. Experimental measurements indicate that V-pits and their complexes are preferential conductive paths under reverse and forward bias. Spectral analysis shows a redshifted wavelength contribution, with respect to MQWs emission peak wavelength, in presence of agglomerates of V-pits surrounded by trench-like defects. The intensity of the redshifted wavelength contribution is more pronounced under    $\mu $   -EL with respect to    $\mu $   -PL characterizations, due to the localization of carrier flow in proximity of V-defects. Results give insight on the role of V-pits and their agglomerates on the electrical and optical properties of high-periodicity quantum well structures, to be used for InGaN-based photodetectors and solar cells.

V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis