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In this article, we report the first experimental investigation of the behavior of the 3-D NAND Flash memory technology in the deep-cryogenic regime (temperature    ${T} &lt; {50}$    K). Clear evidence is provided to demonstrate that, in that    ${T}$    regime, the reduction of the Read bitline voltage gives rise to a paradigm shift in the current&#x2013;voltage characteristics of the memory cells, consisting of the appearance of single-electron transistor (SET)-like conduction schemes. The phenomenon is traced back to nonuniformities in the electrostatic inversion of cell channel, producing, at that deep-cryogenic    ${T}$   , a landscape of conductive quantum dots separated by energy barriers where electron transport is affected by Coulomb blockade. The results represent a first step toward innovative applications of 3-D NAND Flash memories.

First Evidence of SET-Like Behavior of 3-D NAND Flash Cells in the Deep-Cryogenic Regime