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In this work, the simultaneously achievable matching bandwidth and output power of AlScN-based high electron mobility transistors (HEMTs) are derived and compared to conventional AlGaN, GaAs, and Si devices. Moll&#x2019;s method is used to extract time delays resulting in carrier velocities close to    $1\times 10^{{7}}$    cm/s for sheet carrier densities    $\ge 1.5\times 10^{{13}}$    cm&#x2212;2. Subsequently, theoretical current densities of 2.5&#x2013;4 A/mm and a maximum transconductance higher than 600 mS/mm are derived for low barrier thicknesses of 5&#x2013;10 nm and Sc-concentrations of 5&#x0025;&#x2013;20&#x0025;. The matching bandwidth is estimated by the Bode&#x2013;Fano criterion and connected to the output power of the transistor by the power-bandwidth product, which accounts for both parameters simultaneously. AlScN-based devices are found to exhibit a 4.5-times higher power-bandwidth product compared to conventional AlGaN-based HEMTs, quantifying the enormous, theoretical limits. Experimental data already show an improvement by a factor of 1.45 for AlScN-based devices, even in this early stage of development, which proves their superior properties, when aiming for wideband high-power millimeter-wave (mm-wave) devices.

Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTs