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The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current,    $\textit{I}_{\text{D}}$   , during a drain voltage sweep and leading to a higher    $\textit{I}_{\text{D}}$    saturation value. We report new experimental data concerning the dynamic behavior of the &#x201C;kink&#x201D; in AlGaN/GaN HEMTs and correlate them with deep levels. The results demonstrate the role of the Poole&#x2013;Frenkel effect in determining the occurrence of the kink and identify the experimental conditions that make it observable.

ieee transactions on electron devices

Dynamic Behavior of Threshold Voltage and    $\textit{I}_{\text{D}}$   &#x2013;   $\textit{V}_{\text{DS}}$    Kink in AlGaN/GaN HEMTs Due to Poole&#x2013;Frenkel Effect