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In this article, we report on the fabrication of    $\beta $   -Ga2O3 pseudo-CMOS inverters using enhancement-mode (E-mode)    $\beta $   -Ga2O3 single-finger (   $\text{S}_{\text {F}}{)}$    and multifinger (   $\text{M}_{\text {F}}{)}$    thin-film transistors (TFTs). Initially, single-stage monolithic inverter ICs were fabricated using TFTs having threshold voltages    ${V}_{\text {th}}^{\text {SF}}$    &#x003D; 0.6 V and    ${V}_{\text {th}}^{\text {MF}}$    &#x003D; 0.1 V. However, the single-stage inverter yielded poorer gain (4.50 at    ${V}_{\text {DD}}$   , supply voltage &#x0003D; 3 V). Alternatively, a pseudo-CMOS (double-stage) inverter was designed and fabricated, yielding a maximum gain of 6.45 but with a poor noise margin (NM). To improve the NM, the pseudo-CMOS circuit was tested using TFTs having higher threshold voltages (   ${V}_{\text {th}}^{\text {SF}}$    &#x003D; 1.85 V and    ${V}_{\text {th}}^{\text {MF}}$    &#x003D; 1.75 V). Notably, the optimized pseudo-CMOS circuit exhibited the least peak power consumption (0.2 nW) and the maximum gain of 8 at    ${V}_{\text {DD}}$    &#x003D; 3 V. The monolithically integrated devices&#x2019; performance and IC highlight this technology&#x2019;s remarkable potential for application in the emerging sector of power electronics and extreme-environment electronics.

β-Ga 2 O 3 Pseudo-CMOS Monolithic Inverters