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The intrinsic gate resistance (   ${R}_{\text {g}{\_}{\text {in}}}{)}$   , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal&#x2013;oxide&#x2013;semiconductor field-effect transistors (MOSFETs). The study demonstrated that    ${R}_{\text {g}{\_}{\text {in}}}$    is overestimated in the conventional measurement scheme due to the contact resistance    ${R}_{\text {sp}}$    between p-type SiC and the source electrode. Here, 6.7    $\text{m}\Omega \cdot $   cm2 was measured for    ${R}_{\text {sp}}$    using the transfer length method (TLM), and    ${R}_{\text {g}{\_}{\text {in}}}$    =    $9 \Omega $    was the revised value, unlike the conventional value of    $25 \Omega $   . This improved    ${R}_{\text {g}{\_}{\text {in}}}$    provides better-simulated switching waveforms in a double-pulse test (DPT) with a SiC MOSFET; however, the method requires detailed knowledge of the target device. Accordingly, we developed another measurement scheme without such prerequisites. In this scheme, three types of impedance (   ${Z}{)}$    were measured:    ${Z}$    between the drain (D) and source terminal (S), and two    ${Z}_{\text {s}}$    between the gate and S, with DS left open and short. From these results,    ${R}_{\text {g}{\_}{\text {in}}}$    was determined to be    $8.8 \Omega $    with other device parasitic parameters simultaneously.

Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance