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A helium-3 ion bombardment technique is proposed to realize highQ inductors by creating locally semi-insulating substrate areas. A dose of 1.0 &#x00D7; 10<sup>13</sup> cm<sup>-2</sup> helium-3 increases a Si substrate resistivity from 4 &#x03A9; &#x00B7; cm to above 1 kQ &#x00B7; cm, which improves the quality factor of a 2-nH inductor with a 140-&#x03BC;m diameter by 38% (Q = 16.3). An aluminum mask is used for covering active areas, and at least 15-&#x03BC;m distance from the mask edge is required to avoid the p-n junction leakage. The proposed technique is applied to an 8-GHz oscillator, and an 8.5 dB improvement of the measured phase noise has been achieved.

ieee transactions on electron devices

High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits

High- $Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits