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We discuss the degradation mechanisms of C-doped 0.15-   $\mu \text{m}$    gate AlGaN/GaN HEMTs tested by drain step-stress experiments. Experimental results show that these devices exhibit cumulative degradation effects during the step-stress experiments in terms of either (i) transconductance (   $g_{\mathrm{ m}}$   ) decrease without any threshold-voltage (   $V_{\mathrm{ T}}$   ) change under OFF-state stress, or (ii) both    $V_{\mathrm{ T}}$    increase and    $g_{\mathrm{ m}}$    decrease under ON-state stress conditions. To aid the interpretation of the experiments, two-dimensional hydrodynamic device simulations were carried out. Based on the obtained results, we attribute the    $g_{\mathrm{ m}}$    decrease accumulating under OFF-state stress to hole emission from CN acceptor traps in the gate-drain access region of the buffer, resulting in an increase in the drain access resistance. On the other hand, under ON-state stress, channel hot electrons are injected into the buffer under the gate and in the gate-drain region where they are captured by CN traps, leading to    $V_{\mathrm{ T}}$    and    $g_{\mathrm{ m}}$    degradation, respectively.

Mechanisms of Step-Stress Degradation in Carbon-Doped 0.15-μm AlGaN/GaN HEMTs for Power RF Applications