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Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE of the gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field-effect-transistors (CFETs) which are formed by vertically stacking  n -FET on top of  p -FET. Among the six factors, NS thickness ( T NS  ), NS width ( W NS  ), and gate length ( L G  ) are identified as crucial factors contributing to large variations in device characteristics. The  p -FET exhibits substantial off-state current fluctuation (about 151&#x0025;) due to the bottom parasitic channel leakages. Compared with the magnitudes of dynamic and short circuit powers, the static power is marginal, but it possesses the largest fluctuation (up to 148&#x0025;). If we assume that each factor of PVE has the same probability distribution as the others and all are mutually independent, the statistical sum of their power fluctuations will exhibit more than 50&#x0025; overestimations, compared with the results when all factors are considered simultaneously.

Electrical Characteristic and Power Fluctuations of GAA Si NS CFETs by Simultaneously Considering Six Process Variation Factors