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This paper presents the sampling and comparator speed-enhancement techniques for SAR ADCs under near-threshold supply voltages. The proposed level-shifted boosting circuit generates sharp falling edges for the sampling clock, which is found a key factor limiting the sample speed under ultra-low voltages. Delayed cross-coupling comparator is introduced in this work, which enhances the comparator regeneration while keeping the noise comparable. A 0.35V 8b 12MS/s SAR ADC is designed in a 65nm CMOS technology to prove the proposed techniques. The post-layout simulated SAR ADC consumes only <inline-formula> <tex-math notation="LaTeX">$6.71~\mu \text{W}$ </tex-math></inline-formula> and achieves SNDR of 48.8dB at Nyquist input, resulting in a figure-of-merit (FoM) of 2.47 fJ/convertion-step. Simulation results show the proposed speed-enhancement techniques improve the sampling rate of SAR ADC significantly under near-threshold supply voltages.

Sampling and Comparator Speed-Enhancement Techniques for Near-Threshold SAR ADCs