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We introduce the first diode-pumped GaSb-based semiconductor membrane laser with a continuous wave (cw) output power of 1.5 W at a center wavelength of    $2.08~\mu \text{m}$    with an optical-to-optical efficiency of 11.7 &#x0025; and thermal resistance of 0.74 K/W. It features a broad tunability over 117 nm, achieved using a 3-mm birefringent quartz crystal in Brewster configuration. This tuning range is currently limited by the dielectric cavity mirrors. The laser beam quality, indicated by an    $\text{M}^{2} &lt; 1.45$   , remains excellent across all output powers. Unlike diode-pumped ion-doped solid-state lasers, this semiconductor laser offers full wavelength flexibility through InGaSb quantum well (QW) bandgap engineering in the short-wave-infrared (SWIR) regime. The 1.2-   $\mu \text{m}$    thick membrane gain chip with 12 InGaSb QWs is directly bonded on a silicon carbide heatspreader. This type of laser is also referred to as a MECSEL (Membrane External Cavity Surface Emitting Laser) which can support high-power operation in the SWIR regime due to their excellent heat dissipation. We developed new processing techniques to showcase the promising results for MECSEL in the GaSb-based material system.

2- μ m 1.5-W Optically Pumped Semiconductor Membrane Laser