English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

We report on the design, fabrication and characterization of red &#x03BC;-LEDs directly grown on large-scale silicon wafers through a superior-quality Ge buffer. 300mm Ge/Si substrates with a threading dislocation density (TDD) of &#x007E;10 7  cm -2  were successfully achieved, then followed by the growth and process of visible 649nm AlGaAs-based red emitters. The electro-optical properties of various red &#x03BC;-LEDs with diameters ranging from 10 to 100&#x03BC;m are investigated, showing promising performances. Those results coupled with numerical analysis with a model based on transfer-matrix with dipole source-terms help us better identify the main challenges limiting the efficiencies of our devices, while providing optimization routes to alleviate them. We believe that these results could pave the way for a monolithic large-scale and low-cost integration of red &#x03BC;-LEDs on 300mm Si-CMOS driving circuits and for the fabrication of high-resolution RGB microdisplays that see use in various applications in optoelectronics.

III-V heterostructure grown on 300mm Ge/Si wafer for large-scale fabrication of red μ-LEDs