English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Dynamic on-resistance (   ${R}_{ \mathrm{\scriptscriptstyle ON}}{)}$    affects the stability of p-GaN power HEMTs. In Schottky-gate HEMTs, dynamic    ${R}_{ \mathrm{\scriptscriptstyle ON}}$    is associated to either electron trapping at device surface or dynamic effects occurring in the buffer. However, in p-GaN HEMTs the floating p-GaN region can have an additional role on dynamic    ${R}_{ \mathrm{\scriptscriptstyle ON}}$   , due to removal/injection of holes from/into the barrier with relatively long time constants, which can be erroneously interpreted as a reliability issue. In this letter, we present a model to explain the dynamic    ${R}_{ \mathrm{\scriptscriptstyle ON}}$    due to surface-related effects in p-GaN power HEMTs. The model, called &#x2018;hole virtual gate&#x2019;, attributes the experimentally observed    ${R}_{ \mathrm{\scriptscriptstyle ON}}$    instability due to negative/positive gate bias stress (NGS/PGS) to the charging/discharging of surface traps in the AlGaN barrier by the removal/injection of holes through the gate metal/p-GaN Schottky junction. We verify the validity of the model by means of calibrated numerical simulations, that correlate the activation energy    ${E}_{\text {A}}~\approx ~0.4$    eV of both    ${R}_{ \mathrm{\scriptscriptstyle ON}}$    increase/decrease during NGS/PGS to the thermal ionization energy of traps in the barrier.

Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs