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In this study, we fabricated superb &#x03B2;-Ga 2 O 3  Schottky barrier diodes (SBDs) with high breakdown voltage ( V  br ) and low leakage through combining platinum oxide (PtO x ) and anodic self-aligned mesa termination (SAMT). The PtO x  that forms a high barrier with &#x03B2;-Ga 2 O 3  enables the SAMT to function sufficiently. The in-situ annealing dry etch process repair the mesa sidewall and improve the Schottky contact well. SBDs with different mesa-etched depths ( D  ee ) were systematically studied, including 0, 0.3, 0.6, 0.9, and 1.2 &#x03BC;m. The results showed that the  V  br  of the PtO x /&#x03B2;-Ga 2 O 3  SBD increased from 1120 V to 2738 V, yielding a high power figure of merit (PFOM) of 1.02 GW/cm 2 . Meanwhile, the device maintained a less than 10 &#x03BC;A/cm 2  leakage current density until -2000 V. Devices with radii of 200, 100, and 50 &#x03BC;m obtained highest  V  br  of 2508, 2772, and 2738 V at a  D  ee  of 1.2 &#x03BC;m, respectively. The devices can be passivated by SU-8 without  V  br  degradation. This work provides an effective method for further improving the performance of &#x03B2;-Ga 2 O 3  SBDs and promotes the application of &#x03B2;-Ga 2 O 3  power diodes.

2.7 kV Low Leakage Vertical PtO x /β-Ga 2 O 3 Schottky Barrier Diodes with Self-Aligned Mesa Termination