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We report on DC and RF measurement results of AlScN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD). Comparing the properties with those of a wafer grown with the same MOCVD tool but featuring an AlGaN barrier, the sheet carrier density (   $\text {n}_{\text {s}}$   ) of    $1.50\times 10^{{13}}$    cm   $^{-{2}}$    measured on the AlScN/GaN wafer is around 60 &#x0025; higher. This translates to a power density (   $\text {P}_{\text {out}}$   ) of 8.4 W/mm at a frequency of 30 GHz and a drain bias of 30 V. Also, a high power-added efficiency (PAE) of 48.9&#x0025; and 46.1&#x0025; is reached, when biased at 25 V and 30 V, respectively. These early results illustrate the great potential AlScN/GaN devices carry for improving on the achievable output power on device level at millimeter-wave (mmWave) frequencies.

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz