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Field-effect transistors switched by quantum band-to-band tunneling mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their exceptional electronic properties of sub-thermionic subthreshold swing. However, fundamental limitations in drive current have hindered such technology encountering for high-performance and high-speed operations, especially for silicon-based device. Here, we demonstrate a novel pathway of integrating tunneling and thermionic emission mechanisms together, to circumvent their respective limitation and design a hybrid adaptively-modulated field-effect transistor that orients power saving and performance enhancement simultaneously. This transistor architecture, utilizing a nested source configuration without cost or area penalties, exhibits both ultra-steep (sub-thermionic) subthreshold swing and the largest &#x2018;on&#x2019; and &#x2018;off&#x2019; current ratio over the state-of-the-art tunneling transistors. Our design methodology of hybrid switching mechanism is also applicable to other mechanism, material and architecture systems, opening the doors to a range of high-speed application opportunities for ultralow-power but performance-insufficient electronics.

HamFET: a high-performance sub-thermionic transistor through incorporating hybrid switching mechanism