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In this paper we investigate the reliability of AlGaN-based UV-C LEDs with an emission wavelength of 265 nm. By submitting the devices to constant current stress, two main electrical degradation processes are identified: a turn-on voltage shift and an increase in the forward leakage current. In particular, these processes were respectively attributed to: (i) a partial passivation of the Mg-doping concentration in the region adjacent to the contact, probably caused by a local hydrogen diffusion, and ii) a diffusion&#x002F;generation process of defects in the interlayer, responsible for the increase in the trap-assisted tunneling. To validate these hypotheses, we employed TCAD simulations by varying only the Mg-doping concentration in the region adjacent to the p-contact and the defect density in the interlayer. Thus, we correctly reproduced the experimental variation in electrical characteristics, confirming the physical mechanisms identified.

Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs