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In this paper, we comparatively studied the energy band diagram and the cutoff wavelength characteristics of germanium-tin (GeSn) fin and pillar array detectors wrapped in a Si3N4 liner stressor to unveil the impacts of tensile strain and device architecture in the absorption spectra of the devices. A large tensile strain is introduced into GeSn devices by the expansion of the Si3N4 liner stressor. Compared to the fin detector, a larger tensile volume strain is demonstrated in the GeSn pillar architecture. With the tensile strain induced by the Si3N4 liner stressor, the direct bandgap EG,&#x0393; of GeSn is obviously shrinked by lowering the energy of the &#x0393; conduction band valley, which results in a significant extension of absorption edge in the GeSn detectors. As the Si3N4 liner stressor releases internal stress and expands, the absorption edge of the tensile-strained Ge0.90Sn0.10 pillar array detector with the length of side of pillar Lpillar of 100 nm is extended to 4.35 &#x03BC;m. With further improvement, the tensile-strained GeSn pillar architecture with the Si3N4 liner stressor will be competitive for the application in 2-5-&#x03BC;m mid-infrared spectra.

ieee photonics journal

Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si 3N 4 Liner Stressor: Theoretical Investigation of Impact of Device Architectures