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An equivalent-asymmetric coupling coefficient (EACC) distributed feedback laser (DFB) semiconductor laser with equivalent-half apodization grating (EHAG) structure is proposed and experimentally demonstrated for the first time; the EHAG profile is equivalently realized by linearly changing the duty cycle of a sampled Bragg grating along the one half cavity, while that of the other half cavity is kept uniform. Compared with the equivalent-symmetric coupling coefficient DFB laser, the simulated intensity distribution of the EACC DFB laser shows that the light power is concentrated not only on near the phase-shift region and that the power at the front end is enlarged. Therefore, the longitudinal spatial hole burning may be reduced; the output efficiency and the single-mode stability may be improved. The experimental results show that the output power ratio between the front and rear facets is about 2.17 and the side-mode suppression ratios are over 50 dB when the injection current is in the range from 60 to 200 mA.

An Equivalent-Asymmetric Coupling Coefficient DFB Laser With High Output Efficiency and Stable Single Longitudinal Mode Operation