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Thermal resistance and optical evanescent coupling of InP-based waveguide uni-traveling carrier photodiode (UTC-PD) integrated on silicon on insulator (SOI) through novel Al2O3 bonding layer have been investigated with a constant heat spreading model and optical beam propagation method (BPM), respectively. Compared to UTC-PD integrated on SOI through conventional SiO2 bonding layer, there is a significant reduction (up to 70.41%) in terms of the total thermal resistance for the same structure through Al2O3 bonding layer. On the other hand, based on the evanescent coupling simulation and analysis with BPM, as compared to SiO2 bonding scheme, no compromise in optical coupling efficiency was found by using Al2O3 bonding layer. Our results suggest that Al2O3 bonding layer could be a promising candidate for high-power and high-speed III-V photonic devices integrated on SOI, where thermal dissipation is a major concern.

ieee photonics journal

Design and Analysis of InP-Based Waveguide Uni-Traveling Carrier Photodiode Integrated on Silicon-on-Insulator Through <inline-formula> <tex-math notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$</tex-math></inline-formula> Bonding Layer

Design and Analysis of InP-Based Waveguide Uni-Traveling Carrier Photodiode Integrated on Silicon-on-Insulator Through $\hbox{Al}_{2}\hbox{O}_{3}$ Bonding Layer