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The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing the ternary substrates, the material gains were found as ~ 3-5 times higher than that of conventional method with reduced wavelength shift. The threshold carrier density is reduced by ~ 15%-50% from the use of ternary substrate method for green- and yellow-emitting lasers.

Optical Gain and Laser Characteristics of InGaN Quantum Wells on Ternary InGaN Substrates