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We discuss the characterization and numerical simulation of vertical Ge-on-Si waveguide photodetectors (VPIN WPDs) of the Cisco platform for data communications in the O-band (  $1.31 \,\mu \mathrm{m}$  ), with the goal of optimizing their frequency response while integrating them into low-power systems. In a large set of WPDs belonging to 6 different structural variants, at a standard bias voltage of   $-2 \,\mathrm{V}$   the best specimens exhibit an intrinsic electro-optic bandwidth of more than   $40 \,\mathrm{G}\mathrm{Hz}$  , which is reduced to about   $10 \,\mathrm{G}\mathrm{Hz}$   at zero bias. A comprehensive 3D multiphysics model, validated through the characterization campaign, provides design guidelines towards intrinsic bandwidths not only wider than   $60 \,\mathrm{G}\mathrm{Hz}$   at   $-2 \,\mathrm{V}$  , directly suitable for application in 200 Gbit/s systems, but also wider than   $40 \,\mathrm{G}\mathrm{Hz}$   at zero bias, not including the possible recourse to extrinsic parameter engineering.

TCAD-Assisted Progress on the Cisco Platform Toward Low-Bias 200 Gbit/s vertical- pin Ge- on-Si Waveguide Photodetectors