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A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.

journal of lightwave technology

Determination of Quantum Efficiency in In<inline-formula><tex-math>$_{\bf {0.53}}$</tex-math> </inline-formula>Ga<inline-formula><tex-math>$_{\bf{0.47}}$</tex-math></inline-formula>As-InP-Based APDs

Determination of Quantum Efficiency in In$_{\bf {0.53}}$ Ga$_{\bf{0.47}}$As-InP-Based APDs