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In this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag phenomenon of the Bosch process. The performance of the 3DCESD device is influenced by the structural parameter S. Comparative simulations were conducted using TCAD. The overall electric field and weighting potential of 3DCESD are significantly optimized. MIP and continuous pulse laser were performed separately under bias voltages of -50V and -5V. The 3DCESD exhibits notable advantages, including rapid response speed, high charge collection efficiency, minimal inhomogeneity, and low power consumption.

Design of Fast Response Back-Illuminated 3D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon