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In this paper, we propose an improved method for extracting the four noise parameters of InP HEMT devices based on a 50-&#x2126; noise measurement system. The noise equivalent circuit and noise correlation matrix technique is combined with 50-&#x2126; noise measurement to determine the noise parameters. This method eliminates expensive tuners and obtains accurate initial parameter values. The reduction in the fitting factors that need to be optimized simplifies the optimization process of traditional methods. High consistency between measured and modeled noise parameters up to 50 GHz for InP HEMT with 70 nm gatelength and 2&#x00D7;50 &#x03BC;m gatewidth are given by this method. These are providing a simple and fast way for the measurement process of noise parameters.

An Improved Method for InP HEMT Noise-Parameter Determination Based On 50-Ω Noise Measurements