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Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a c-axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown voltage. A combination of the OSFET with L/W of 60 nm/60 nm and a single damascene ferroelectric capacitor (FECap) attained FE-Cap area reduction to 0.06 &#x03BC;m2 per cell. The FeRAM achieved a write time of 10 ns, a rewriting endurance of 109 cycles, and a data retention time of 100 min at 85&#x00B0;C. The OSFET is an optimal selector element for emerging memories.

Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM