English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

In this letter, high-performance Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) metal-insulator-semiconductor (MIS) capacitor has been demonstrated. The capacitance-voltage (C&#x2013;V) curves of the Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) MIS capacitor remain stable under different measurement frequencies. The leakage current density is lower than <inline-formula> <tex-math notation="LaTeX">$2.0 \times 10^{-8}$ </tex-math></inline-formula> A/cm2 when the gate voltage is in the range of &#x2212;5&#x007E;13 V. The fixed charge and trapped charge densities in Al2O3 film are <inline-formula> <tex-math notation="LaTeX">$4.4 \times 10^{12}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$6.0 \times 10^{11}$ </tex-math></inline-formula> cm&#x2212;2, respectively. Average and minimum interface trapped charge density (<inline-formula> <tex-math notation="LaTeX">${\mathrm {D}}_{it}$ </tex-math></inline-formula>) for Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) interface has been extracted to be as low as <inline-formula> <tex-math notation="LaTeX">$3.3 \times 10^{11}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$2.3 \times 10^{11}$ </tex-math></inline-formula> cm&#x2212;2 eV&#x2212;1 via the Terman method, respectively. The low <inline-formula> <tex-math notation="LaTeX">${\mathrm {D}}_{it}$ </tex-math></inline-formula> is probably attributed to the modification of vacancy defects and the introduction of hydroxyl groups at the Al2O3/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 (001) interface after piranha solution pretreatment for <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3.

Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor