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&#x03B2;-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICEcompatible model are constructed for double-pulse test circuit and DC-DC boost converter simulations. The reverse recovery time (<inline-formula> <tex-math notation="LaTeX">$t_{{\mathrm {rr}}}$ </tex-math></inline-formula>) of the &#x03B2;-Ga2O3 SBD is 8.8 ns and its reverse recovery charge (<inline-formula> <tex-math notation="LaTeX">$Q_{{\mathrm {rr}}}$ </tex-math></inline-formula>) is 8.33 nC when switching from a forward current of 1 A to a reverse bias voltage of 100 V with a di/dt of 400 A/&#x03BC;s, which is analogous with the prediction of our model. Device with the radius of 500 &#x03BC;m was fabricated, a current of 2 A can be obtained at the forward voltage of 2 V, meanwhile, the breakdown voltage is 467 V. The Ga2O3-based converter module after device packaging with TO-220 reveals a comparative efficiency to that of the SiC-based converter under multiple conditions, and reached up to 95.62&#x0025; at the input voltage of 200 V. The decent performance of Ga2O3 FP-SBD and its DC-DC converter indicates great potential in power application.

-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter