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Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600&#x00B0;C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of 1.14 &#x00D7; 10-3 &#x03A9; cm2 at 600&#x00B0;C. The on/off drain saturation current ratio and intrinsic gain at 600&#x00B0;C are 1.53 &#x00D7; 103 and 57.2, respectively. These results indicate that 4H-SiC JFETs can be used for extremely-high-temperature electronics applications.

4H-SiC N-Channel JFET for Operation in High-Temperature Environments