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Novel In 0.12 Al 0.88 N/AlN/Al x Ga 1-x N/In 0.12 Al 0.88 N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-plate (DFP) were investigated. A symmetrically-graded Al x Ga 1-x N (x = 0.32 &#x2192; 0.1 &#x2192; 0.32) wide-gap channel with an In 0.12 Al 0.88 N back-barrier was devised to enhance the carrier confinement, channel conductivity, and breakdown characteristics. The MOS-gate structure, employing high-k Al 2 O 3  gate dielectric and surface passivation deposited by the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique, has resulted in enhanced gate modulation and decreased gate leakage current. A control MOS-HFET (sample A) with an equivalent Al 0.21 Ga 0.79 N channel and DFP was fabricated in comparison with the present design without/with DFP (samples B1/B2). The present sample B2 (A) has demonstrated a superior maximum drain-source current density ( I DS, max  ) of 937.4 (838.8) mA/mm, maximum extrinsic transconductance ( g m, max  ) of 89.6 (80.6) mS/mm, on/off-current ratio ( I on  / I off  ) of 1.8 &#x00D7; 10 8  (1.3 &#x00D7; 10 8 ), two-terminal off-state gate-drain breakdown voltage ( BV GD  ) of -530 (-490) V, three-terminal on-state drain-source breakdown voltage ( BV DS  ) of 520 (465) V at 300 K, and the corresponding Baliga&#x2019;s figure-of-merit (BFOM) of 79.5 (39.3) MW/cm 2 . The present design is promising for high-voltage power-switching circuit applications.

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Investigations on In 0.12 Al 0.88 N/AlN/Al x Ga 1-x N/ In 0.12 Al 0.88 N MOS-HFETs with Symmetrically-Graded Wide-gap Channel and Drain Field-Plate Design