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This article systematically studies the AlGaN/GaN MIS-HEMTs using the O 2  plasma alternately treated Al 2 O 3  as gate dielectric. The X-ray photoelectron spectroscopy (XPS) analyses and capacitance-voltage (C-V) measurement results show that the density of the border traps originating from the Al-OH bonds in the ALD-Al 2 O 3  gate dielectric can be significantly reduced after the O 2  plasma alternating treatment. Consequently, a low gate leakage current and a high field-effect mobility of 1680cm 2 /V&#x00B7;s are achieved. The results also demonstrate that the fabricated AlGaN/GaN MIS-HEMTs with the O 2  plasma alternating treatment exhibit improved performances, having a high ON/OFF ratio of &#x007E;1011, a steep subthreshold slope of 74 mV/dec, a small hysteresis (&#x0394; V  TH ) of 0.1 V and small ON-resistance ( R  ON ) of 6.0 &#x03A9;&#x00B7;mm. The device thermal stability was also improved within the tested temperature range. In addition, the pulsed  I  D - V  DS  measurements with quiescent drain bias ( V  DS0 ) stress of 40 V present negligible current collapse (2%) and low degradation of dynamic  R  ON  by 1.04 times the static  R  ON .

O 2 Plasma Alternately Treated ALD-Al 2 O 3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs