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AlGaN/GaN Fin-shaped field-effect transistors (FinFETs) with nano-sized Fin width (W Fin ) from 20 nm to 230 nm are characterized using low-frequency noise (LFN) measurement. All devices exhibit 1/ f  noise shape with Hooge mobility fluctuations (HMF) at subthreshold region and carrier number fluctuations (CNF) at accumulation region. However, the lowest normalized drain current noise spectral densities ( S Id /I d  2  ) are obtained in the narrow Fin device (W Fin  = 20 nm). This is due to significant contribution of bulk channel without the 2-dimensional electron gas density (2DEG) channel and two sidewall metal-oxide-semiconductor (MOS) channels. It is also noticed that the lowest trap density ( N t  ) and a large separation in CNF noise model clearly indicate to the volume accumulation effect caused by bulk conduction in narrow device. The Hooge constants (&#x03B1; H ) extracted by HMF noise model for the narrow device are one-order higher than those of the wide Fin device, which tells that the narrow device suffers from the strong phonon scattering in the bulk channel. From the product of ( S Id   &#x00D7; frequency ( f )) versus I d  curves, the volume accumulation phenomenon is also clearly observed in narrow Fin device.

Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction